12.6.08

CMOS FABRICATION PROCESS

CMOS FABRICATION PROCESS:

N-WELL PROCESS:

main steps involved in the fabrication process of n-well CMOS are

  • Formation of n-well regions
  • define nmos and pmos active areas
  • field and gate oxidation(thinox)
  • form and pattern polysilicon
  • p+ diffusion
  • n+ diffusion
  • contact cuts
  • deposit and pattern metallization
  • over glass with cuts for bonding pads

P-WELL PROCESS:

main steps involved in the fabrication process of P-well CMOS are

  • Formation of P-well regions
  • define nmos and pmos active areas
  • field and gate oxidation(thinox)
  • form and pattern polysilicon
  • n+ diffusion
  • p+ diffusion
  • contact cuts
  • deposit and pattern metallization
  • over glass with cuts for bonding pads
for detail fabrication process please check out the following link

http://lsmwww.epfl.ch/Education/former/2002-2003/VLSIDesign/ch02/ch02.html#sec_toc
or
click here

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